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Dimensional crossover and weak localization in a 90 nm n-GaAs thin film
Author(s) -
A. M. Gilbertson,
A. K. M. Newaz,
Woojin Chang,
Rashid Bashir,
S. A. Solin,
L. F. Cohen
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3176968
Subject(s) - weak localization , dephasing , condensed matter physics , scattering , thin film , crossover , electron , epitaxy , magnetoresistance , physics , materials science , chemistry , magnetic field , quantum mechanics , nanotechnology , layer (electronics) , artificial intelligence , computer science
We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T

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