Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer | Zendy

Ming-ta Hsieh | Zendy; MengHuan Ho | Zendy; KuanHeng Lin | Zendy; Jenn-Fang Chen | Zendy; TengMing Chen | Zendy; Chin H. Chen | Zendy

Open Access

Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Author(s) -

Ming-ta Hsieh,

MengHuan Ho,

KuanHeng Lin,

Jenn-Fang Chen,

TengMing Chen,

Chin H. Chen

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3173824

Subject(s) - ambipolar diffusion , doping , materials science , optoelectronics , anthracene , tungsten , oxide , fabrication , layer (electronics) , quantum efficiency , electrical resistivity and conductivity , analytical chemistry (journal) , nanotechnology , chemistry , photochemistry , organic chemistry , electrical engineering , metallurgy , medicine , physics , plasma , alternative medicine , pathology , quantum mechanics , engineering

An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cdA and a power efficiency of 2.4 lmW at 20 mAcm(2). This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research