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Transmission electron microscopy and electrical properties measurements of laser doped silicon and GaAs
Author(s) -
R. T. Young,
J. Narayan,
R. D. Westbrook,
R. F. Wood
Publication year - 1979
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.31720
Subject(s) - materials science , optoelectronics , epitaxy , transmission electron microscopy , silicon , doping , polycrystalline silicon , diode , amorphous solid , laser , layer (electronics) , optics , nanotechnology , crystallography , thin film transistor , chemistry , physics

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