Open AccessNative vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy
Author(s) -
Ł. Kilański,
A. Zubiaga,
F. Tuomisto,
W. Dobrowolski,
V. Domukhovski,
S. A. Varnavskiy,
С. Ф. Маренкин
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3168440
Subject(s) - vacancy defect , positron annihilation spectroscopy , materials science , acceptor , positron annihilation , spectroscopy , conductivity , crystallography , analytical chemistry (journal) , positron , chemistry , condensed matter physics , physics , electron , chromatography , quantum mechanics
We have studied vacancy defects in chalcopyrite semimagnetic semiconducting mixed Zn1−x(Mn,Co)xGeAs2 bulk crystals with alloy composition x varying between 0.052 to 0.182 using positron annihilation spectroscopy. We identified As vacancies, potentially complexed with the transition metal alloying elements, in all the studied samples, while no cation vacancy related defects were detected. The positron lifetimes for the bulk ZnGeAs2 lattice and neutral As vacancy were determined to be τB=220–230 ps and τAs=300±10 ps, respectively. Our results also show that the p-type conductivity in the samples is not due to cation vacancy related acceptor centers. The As vacancies were found to be present at such low concentrations that they cannot be responsible for the compensation of the p-type conductivity or the reduction of mobility in the Zn1−x(Mn,Co)xGeAs2 samples.Peer reviewe
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom