On the temperature dependence of point-defect-mediated luminescence in silicon | Zendy

Daniel Recht | Zendy; Federico Capasso | Zendy; Michael J. Aziz | Zendy

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On the temperature dependence of point-defect-mediated luminescence in silicon

Author(s) -

Daniel Recht,

Federico Capasso,

Michael J. Aziz

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3157277

Subject(s) - luminescence , silicon , photoluminescence , electroluminescence , exciton , kinetics , materials science , semiconductor , crystallographic defect , optoelectronics , semiconductor materials , condensed matter physics , molecular physics , nanotechnology , chemistry , physics , layer (electronics) , quantum mechanics

We present a model of the temperature dependence of point-defect-mediated luminescence in silicon derived from basic kinetics and semiconductor physics and based on the kinetics of bound exciton formation. The model provides a good fit to data for W line electroluminescence and G line photoluminescence in silicon. Strategies are discussed for extending luminescence to room temperature.

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