Open AccessSilicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell
Author(s) -
F. Gourbilleau,
Céline Ter,
David Maestre,
Olivier Palais,
Christian Dufour
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3156730
Subject(s) - photoluminescence , nanoclusters , materials science , annealing (glass) , silicon , amorphous solid , sputter deposition , absorption (acoustics) , amorphous silicon , sputtering , solar cell , analytical chemistry (journal) , crystalline silicon , optoelectronics , thin film , nanotechnology , crystallography , chemistry , composite material , chromatography
International audienceSi-rich-SiO 2 SRSO / SiO 2 multilayers MLs have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters Si-ncls within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100 ° C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient in cm −1 has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls
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