Open AccessUltrasmall silicon quantum dots
Author(s) -
Floris A. Zwanenburg,
A. A. van Loon,
Gary A. Steele,
Cathalijn E. W. M. van Rijmenam,
T. Balder,
Ying Fang,
Charles M. Lieber,
Leo P. Kouwenhoven
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3155854
Subject(s) - quantum dot , excited state , nanowire , silicon , materials science , quantum point contact , spectroscopy , optoelectronics , charge (physics) , schottky barrier , condensed matter physics , nanotechnology , molecular physics , physics , quantum well , atomic physics , optics , quantum mechanics , laser , diode
We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and additionally they display a pronounced excited-state spectrum. The Si channel lengths are visible in scanning electron microscopy images and match the dimensions predicted by a model based on the Poisson equation. The smallest dots (<12?nm) allow identification of the last charge and thus the creation of a single-charge quantum dot
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