Open Access80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes
Author(s) -
L. Nougaret,
H. Happy,
G. Dambrine,
Vincent Derycke,
J.P. Bourgoin,
Alexander A. Green,
Mark C. Hersam
Publication year - 2009
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3155212
Subject(s) - carbon nanotube , materials science , field effect transistor , transistor , electronics , optoelectronics , nanotechnology , voltage , electrical engineering , engineering
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