Open AccessImproving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor
Author(s) -
Yen-Cheng Lu,
YungSheng Chen,
Fu-Ji Tsai,
Jyhpyng Wang,
Cheng-Hung Lin,
ChengYen Chen,
YeanWoei Kiang,
C. C. Yang
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3153506
Subject(s) - materials science , optoelectronics , surface plasmon , refractive index , quantum well , dielectric , coupling (piping) , light emitting diode , spontaneous emission , surface plasmon polariton , plasmon , layer (electronics) , semiconductor , optics , laser , nanotechnology , composite material , physics
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