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Size-dependent effective Young’s modulus of silicon nitride cantilevers
Author(s) -
Khashayar Babaei Gavan,
Hidde J. R. Westra,
E. W. J. M. van der Drift,
Warner J. Venstra,
Herre S. J. van der Zant
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3152772
Subject(s) - cantilever , materials science , young's modulus , silicon nitride , modulus , silicon , composite material , elasticity (physics) , resonance (particle physics) , nitride , optoelectronics , atomic physics , physics , layer (electronics)
The effective Young’s modulus of silicon nitride cantilevers is determined for thicknesses in the range of 20–684 nm by measuring resonance frequencies from thermal noise spectra. A significant deviation from the bulk value is observed for cantilevers thinner than 150 nm. To explain the observations we have compared the thickness dependence of the effective Young’s modulus for the first and second flexural resonance mode and measured the static curvature profiles of the cantilevers. We conclude that surface stress cannot explain the observed behavior. A surface elasticity model fits the experimental data consistently

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