Open AccessElectronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers
Author(s) -
MeiHsin Chen,
Y.F. Chen,
Chang-Tin Lin,
Guan-Ru Lee,
ChihI Wu,
DongSeok Leem,
JangJoo Kim,
TunWen Pi
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3143718
Subject(s) - cathode , rubidium , doping , analytical chemistry (journal) , electron , x ray photoelectron spectroscopy , materials science , electronic structure , chemistry , inorganic chemistry , optoelectronics , chemical engineering , potassium , computational chemistry , organic chemistry , quantum mechanics , engineering , physics
The electronic properties and chemical interactions of cathode structures using 4,7-diphenyl-1, 10-phenanthroline (Bphen) doped with rubidium carbonate (Rb2CO3) as electron injection layers were investigated. Current-voltage characteristics reveal that the devices with Bphen/Rb2CO3/Al as cathode structures possess better electron injection efficiency than those with cathode structures of Bphen/LiF/Al. Ultraviolet and x-ray photoemission spectroscopy shows that n-type doping effects resulting from Rb2CO3 and the gap states created by aluminum deposition are both keys to the improved carrier injection efficiency. Moreover, theoretical calculation indicates that the chemical reaction between aluminum and the nitrogen atoms in Bphen is the origin of the gap states.
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