Enhancement in hole current density on polarization in poly(3-hexylthiophene):cadmium selenide quantum dot nanocomposite thin films

We demonstrate the effect of polarization on space charge limited J-V behavior in poly(3-hexylthiophene) (P3HT):cadmium selenide (CdSe) ( ∼ 5 nm) quantum dot nanocomposite thin films in hole-only device configuration, indium tin oxide/poly(ethylene-dioxthiophene):polystyrenesulphonate/P3HT:CdSe/Au. Current density has been found to enhance in these hybrid films on polarization. This has been attributed to decrease in characteristic trap energy from 32 to 27 meV, trap density from 1.7×1018 to 1×1018 cm−3 and increase in hole mobility from 2.6×10−6 to 7.7×10−6 cm2 V−1 s−1 due to field induced enhanced order by dipolar alignment and/or trapping of charge carriers at the nanoscale interfacial boundaries of P3HT and CdSe quantum dots