Spin polarization of Fe4N thin films determined by point-contact Andreev reflection | Zendy

Akari Narahara | Zendy; Keita Ito | Zendy; Takashi Suemasu | Zendy; Y. K. Takahashi | Zendy; A. Ranajikanth | Zendy; K. Hono | Zendy

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Spin polarization of Fe4N thin films determined by point-contact Andreev reflection

Author(s) -

Akari Narahara,

Keita Ito,

Takashi Suemasu,

Y. K. Takahashi,

A. Ranajikanth,

K. Hono

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3140459

Subject(s) - andreev reflection , spin polarization , condensed matter physics , molecular beam epitaxy , polarization (electrochemistry) , thin film , materials science , spin (aerodynamics) , epitaxy , physics , chemistry , superconductivity , nanotechnology , layer (electronics) , electron , quantum mechanics , thermodynamics

The spin polarization of (100)-oriented gamma[prime]-Fe4N layers grown on MgO(001) substrates by molecular beam epitaxy was deduced from point contact Andreev reflection measurements, and the value was compared with that of alpha-Fe. The spin polarization (P) for gamma[prime]-Fe4N is approximately 0.59 at 7.8 K. This value is distinctly larger than that for alpha-Fe (P=0.49 at 7.8 K) measured with an identical setting. The mechanism of enhanced spin polarization in gamma[prime]-Fe4N is discussed

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