Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon | Zendy

Bijaya Paudyal | Zendy; Keith R. McIntosh | Zendy; Daniel Macdonald | Zendy

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Temperature dependent carrier lifetime studies on Ti-doped multicrystalline silicon

Author(s) -

Bijaya Paudyal,

Keith R. McIntosh,

Daniel Macdonald

Publication year - 2009

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3139286

Subject(s) - ingot , silicon , materials science , wafer , hall effect , carrier lifetime , atmospheric temperature range , doping , titanium , range (aeronautics) , electron capture , electron , analytical chemistry (journal) , atomic physics , condensed matter physics , electrical resistivity and conductivity , metallurgy , optoelectronics , thermodynamics , chemistry , composite material , nuclear physics , physics , alloy , chromatography , quantum mechanics

This work was funded by an Australian Research Council Linkage Grant between the Australian National University, SierraTherm Production Furnaces, and SunPower Corporation. D.H.M. is supported by an Australian Research Council fellowship.

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