Erratum: “Terahertz spectroscopic study of vertically-aligned InN nanorods” [Appl. Phys. Lett. 91, 163105 (2007)]
Author(s) -
Hyun-Ju Ahn,
Y.-P. Ku,
Y.-C. Wang,
ChengHsun Chuang,
Shangjr Gwo,
CiLing Pan
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3137182
Subject(s) - nanorod , terahertz radiation , materials science , condensed matter physics , optoelectronics , wide bandgap semiconductor , nanotechnology , physics
[[abstract]]Terahertz time-domain spectroscopy has been used to investigate terahertz conductivity and dielectric response of indium nitride (InN) nanorod array and epitaxial film. The complex terahertz conductivity of InN film is well fitted by the Drude model, while the negative imaginary conductivity of the InN nanorods can be described by using the Drude-Smith model. The electron mobility of the InN film is 1217 +/- 58 cm(2)/V s, while that of the InN nanorods is 80 +/- 5 cm(2)/V s. The reduced mobility of carriers for the latter can be attributed to the restricted carrier transport within the nanorods.[[fileno]]2010144010172[[department]]物理
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