Open AccessPublisher's Note: “First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack” [J. Appl. Phys. 105, 061603 (2009)]
Author(s) -
Peter Broqvist,
Audrius Alkauskas,
Julien Godet,
Alfredo Pasquarello
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3134523
Subject(s) - stack (abstract data type) , semiconductor , oxygen , hydrogen , oxide , condensed matter physics , materials science , energy (signal processing) , chemical physics , chemistry , physics , optoelectronics , computer science , quantum mechanics , metallurgy , programming language
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