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Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
Author(s) -
Daniel Macdonald,
Fiacre Rougieux,
A. Cuevas,
Bianca Lim,
Jan Schmidt,
Marisa Di Sabatino,
L.J. Geerligs
Publication year - 2009
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3121208
Subject(s) - boron , silicon , oxygen , carrier lifetime , materials science , crystallographic defect , doping , solar cell , analytical chemistry (journal) , optoelectronics , chemistry , crystallography , organic chemistry , chromatography
D.M. is supported by an Australian Research Council QEII Fellowship, L.J.G. acknowledges SenterNovem for support, and B.L. and J.S. acknowledge the support of the German Academic Exchange Service.

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