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Roles of the bias fields in the exchange interaction between the electron and hole spins in quantum wells
Author(s) -
M. Idrish Miah
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3119318
Subject(s) - condensed matter physics , spins , physics , magnetic field , quantum well , electron , exchange interaction , polarization (electrochemistry) , oscillation (cell signaling) , transverse plane , spin polarization , chemistry , ferromagnetism , quantum mechanics , laser , biochemistry , structural engineering , engineering
We study the electric-field effects on the spin polarization (P) in dependence of the strength and orientation of the magnetic field in GaAs quantum wells by photoluminescence measurements. The P in a transverse magnetic field is found to oscillate. The transverse electron and heavy-hole g-factors are estimated from the dependences of the oscillation frequency on magnetic field and applied bias. Measurements with the angular variations in the magnetic field show that both the oscillation frequency and decay rate are increased with increasing the angle from the transverse direction. It is, however, shown that the application of the bias to the quantum wells weakens the exchange interaction between the electron and hole spins. 鲰09 American Institute of PhysicsGriffith Sciences, School of Natural SciencesFull Tex

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