Open AccessLow-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
Author(s) -
J. B. Kim,
Canek Fuentes-Hernández,
William J. Potscavage,
X.-H. Zhang,
Bernard Kippelen
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3118575
Subject(s) - atomic layer deposition , materials science , thin film transistor , optoelectronics , threshold voltage , amorphous solid , gate dielectric , subthreshold conduction , dielectric , transistor , subthreshold slope , layer (electronics) , analytical chemistry (journal) , voltage , electrical engineering , nanotechnology , chemistry , crystallography , engineering , chromatography
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