Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates | Zendy

Christian Dais | Zendy; Gregor Mußler | Zendy; H. Sigg | Zendy; E. Müller | Zendy; H. H. Solak | Zendy; Detlev Grützmacher | Zendy

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Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates

Author(s) -

Christian Dais,

Gregor Mußler,

H. Sigg,

E. Müller,

H. H. Solak,

Detlev Grützmacher

Publication year - 2009

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3117230

Subject(s) - annealing (glass) , materials science , photoluminescence , optoelectronics , quantum dot , nanometre , epitaxy , molecular beam epitaxy , nanotechnology , substrate (aquarium) , silicon , layer (electronics) , metallurgy , geology , composite material , oceanography

SiGe quantum dots are proposed as building blocks for future Si device technology. However, in order to exploit the full potential of SiGe islands, it is necessary to control their positioning and size on a nanometer length. This is achieved by templated self-assembly, which combines substrate patterning and subsequent epitaxy. In this paper we report on the evolution of SiGe islands on patterned substrates under consideration of small template variations and postgrowth annealing. The impact of the structural variations on the optical properties of the islands is investigated by photoluminescence measurements. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117230

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