Lattice location study of implanted In in Ge | Zendy

S. Decoster | Zendy; Bart de Vries | Zendy; U. Wahl | Zendy; J. G. Correia | Zendy; A. Vantomme | Zendy

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Lattice location study of implanted In in Ge

Author(s) -

S. Decoster,

Bart de Vries,

U. Wahl,

J. G. Correia,

A. Vantomme

Publication year - 2009

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3110104

Subject(s) - annealing (glass) , vacancy defect , materials science , lattice (music) , ab initio quantum chemistry methods , dissociation (chemistry) , ion implantation , crystallography , germanium , atomic physics , crystallographic defect , ab initio , interstitial defect , condensed matter physics , molecular physics , chemistry , silicon , ion , doping , physics , metallurgy , molecule , optoelectronics , organic chemistry , acoustics

We report on emission channeling experiments to determine the lattice location and the thermal stability of implanted $^{111}$In atoms in Ge. The majority of the In atoms was found on the substitutional site, which is a thermally stable site at least up to 500 °C. We also found strong indication that directly after implantation, a fraction of the implanted $^{111}$In atoms occupies the bond-centered BC site. This fraction disappears after annealing at 300 °C. From comparison with ab initio calculations, electrical studies, and perturbed angular correlation experiments, the In atoms on the BC site can be related to In-vacancy and In-self-interstitial defect complexes. The activation energy for dissociation of this BC related defect was found to be below 1.6 eV

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