z-logo
open-access-imgOpen Access
Intradot dynamics of InAs quantum dot based electroabsorbers
Author(s) -
T. Piwoński,
Jaroslaw Pulka,
Gillian Madden,
G. Huyet,
J. Houlihan,
Evgeny A. Viktorov,
Thomas Erneux,
Paul Mandel
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3106633
Subject(s) - excited state , quantum dot , relaxation (psychology) , dynamics (music) , auger , phonon , population , auger effect , condensed matter physics , physics , atomic physics , molecular physics , optoelectronics , psychology , social psychology , acoustics , demography , sociology
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3106633

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom