Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures | Zendy

Mohanchand Paladugu | Zendy; Jin Zou | Zendy; Yanan Guo | Zendy; Xin Zhang | Zendy; Hannah J. Joyce | Zendy; Qiang Gao | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; Yong Kim | Zendy

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Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures

Author(s) -

Mohanchand Paladugu,

Jin Zou,

Yanan Guo,

Xin Zhang,

Hannah J. Joyce,

Qiang Gao,

Hark Hoe Tan,

C. Jagadish,

Yong Kim

Publication year - 2009

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3103265

Subject(s) - heterojunction , nanowire , facet (psychology) , transmission electron microscopy , materials science , faceting , polar , catalysis , crystallography , optoelectronics , nanotechnology , chemistry , physics , biochemistry , psychology , social psychology , personality , astronomy , big five personality traits

The movement of Au catalysts during growth of InAs on GaAs nanowires has been carefully investigated by transmission electron microscopy. It has been found that Au catalysts preferentially stay on { 112 } B GaAs sidewalls. Since a {112} surface is composed of a {111} facet and a {002} facet and since {111} facets are polar facets for the zinc-blende structure, this crystallographic preference is attributed to the different interface energies caused by the different polar facets. We anticipate that these observations will be useful for the design of nanowire heterostructure based devices. © 2009 American Institute of Physics

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