Open AccessGraphitization process of SiC(0001) studied by electron energy loss spectroscopy
Author(s) -
Thomas Länger,
H. Pfnür,
H. W. Schumacher,
Christoph Tegenkamp
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3100776
Subject(s) - electron energy loss spectroscopy , graphene , x ray photoelectron spectroscopy , materials science , low energy electron diffraction , plasmon , spectroscopy , electron spectroscopy , electron diffraction , electron , photoemission spectroscopy , blueshift , layer (electronics) , dipole , condensed matter physics , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , diffraction , transmission electron microscopy , optics , nuclear magnetic resonance , physics , quantum mechanics , chromatography , photoluminescence , organic chemistry
Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers.
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