Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance | Zendy

Hisaaki Tanaka | Zendy; Shun-ichiro Watanabe | Zendy; Hiroshi Ito | Zendy; Kazuhiro Marumoto | Zendy; Shinichi Kuroda | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance

Author(s) -

Hisaaki Tanaka,

Shun-ichiro Watanabe,

Hiroshi Ito,

Kazuhiro Marumoto,

Shinichi Kuroda

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3100193

Subject(s) - polaron , electron paramagnetic resonance , field effect transistor , materials science , transistor , electron , charge carrier , resonance (particle physics) , electron mobility , condensed matter physics , voltage , optoelectronics , analytical chemistry (journal) , atomic physics , chemistry , nuclear magnetic resonance , physics , quantum mechanics , chromatography

Charge carrier concentration in operating field-effect transistor (FET) of regioregular poly(3-hexylthiophene) has been directly determined by electron spin resonance (ESR). ESR signals of field-induced polarons are observed around g=2.003 under the application of negative gate-source voltage (Vgs). Upon applying drain-source voltage (Vds), ESR intensity decreases linearly in the low Vds region, reaching to about 50% of the initial intensity at the pinch-off point (Vds~=Vgs). For larger absolute values of Vds, it becomes nearly Vds independent. These behaviors are well explained by the change in the carrier concentration obtained by the FET theory using gradual channel approximation

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research