Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources | Zendy

M. L. Smith | Zendy; Rajind Mendis | Zendy; R. E. M. Vickers | Zendy; R. A. Lewis | Zendy

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Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

Author(s) -

M. L. Smith,

Rajind Mendis,

R. E. M. Vickers,

R. A. Lewis

Publication year - 2009

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3095758

Subject(s) - common emitter , terahertz radiation , black body radiation , optoelectronics , radiation , bolometer , silicon , materials science , excited state , excitation , thermal radiation , optics , physics , atomic physics , detector , quantum mechanics , thermodynamics

P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98 +/- 10 nW in this experiment. © 2009, American Institute of Physic

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