Phase-change memory devices based on gallium-doped indium oxide | Zendy

S.-L. Wang | Zendy; C.-Y. Chen | Zendy; M.-K. Hsieh | Zendy; W.-C. Lee | Zendy; A. H. Kung | Zendy; L.H. Peng | Zendy

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Phase-change memory devices based on gallium-doped indium oxide

Author(s) -

S.-L. Wang,

C.-Y. Chen,

M.-K. Hsieh,

W.-C. Lee,

A. H. Kung,

L.H. Peng

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3089238

Subject(s) - indium , gallium , materials science , bixbyite , doping , amorphous solid , phase change memory , crystallization , phase transition , phase (matter) , crystallite , nanosecond , oxide , optoelectronics , analytical chemistry (journal) , condensed matter physics , crystallography , nanotechnology , chemistry , metallurgy , optics , laser , physics , organic chemistry , layer (electronics) , chromatography

[[abstract]]We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250 °C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO.[[fileno]]2030165010003[[department]]電機工程學

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