Self-organization of In nanostructures on Si surfaces | Zendy

Maojie Xu | Zendy; Arifumi Okada | Zendy; Shoji Yoshida | Zendy; Hidemi Shigekawa | Zendy

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Self-organization of In nanostructures on Si surfaces

Author(s) -

Maojie Xu,

Arifumi Okada,

Shoji Yoshida,

Hidemi Shigekawa

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3085960

Subject(s) - nanodot , scanning tunneling microscope , nucleation , nanostructure , materials science , deposition (geology) , silicon , substrate (aquarium) , nanotechnology , nanowire , chemical engineering , scanning electron microscope , optoelectronics , chemistry , composite material , oceanography , sediment , paleontology , organic chemistry , geology , engineering , biology

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-31×31 surface at room temperature (RT) deposition. On a Si(111)-In-4×1/31×31 coexisting surface, nanowires were selectively grown in the Si(111)-In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy

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