InGaN/GaN multiple quantum well solar cells with long operating wavelengths | Zendy

R. Dahal | Zendy; B. N. Pantha | Zendy; J. Li | Zendy; J. Y. Lin | Zendy; H. X. Jiang | Zendy

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InGaN/GaN multiple quantum well solar cells with long operating wavelengths

Author(s) -

R. Dahal,

B. N. Pantha,

J. Li,

J. Y. Lin,

H. X. Jiang

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3081123

Subject(s) - optoelectronics , materials science , wavelength , photovoltaic system , solar cell , fabrication , open circuit voltage , quantum efficiency , wide bandgap semiconductor , quantum well , voltage , optics , physics , laser , electrical engineering , medicine , alternative medicine , pathology , quantum mechanics , engineering

We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In0.3Ga0.7N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).

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