Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material | Zendy

E. Antolín | Zendy; Antonio Martı́ | Zendy; J. Olea | Zendy; David Pastor | Zendy; G. González-Dı́az | Zendy; I. Mártil | Zendy; A. Ĺuque | Zendy

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Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Author(s) -

E. Antolín,

Antonio Martı́,

J. Olea,

David Pastor,

G. González-Dı́az,

I. Mártil,

A. Ĺuque

Publication year - 2009

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3077202

Subject(s) - doping , semiconductor , silicon , materials science , impurity , wafer , carrier lifetime , titanium , delocalized electron , optoelectronics , range (aeronautics) , atomic physics , chemistry , physics , organic chemistry , metallurgy , composite material

The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action

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