Open AccessAtomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks
Author(s) -
D. Tsoutsou,
L. Lamagna,
S.N. Volkos,
Alessandro Molle,
S. Baldovino,
Sylvie SchammChardon,
P.E. Coulon,
M. Fanciulli
Publication year - 2009
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3075609
Subject(s) - x ray photoelectron spectroscopy , atomic layer deposition , materials science , annealing (glass) , analytical chemistry (journal) , high κ dielectric , transmission electron microscopy , dielectric , thin film , permittivity , gate dielectric , spectroscopy , electron energy loss spectroscopy , optoelectronics , nanotechnology , chemical engineering , chemistry , metallurgy , electrical engineering , physics , chromatography , quantum mechanics , engineering , transistor , voltage
Thin LaxZr1−xO2−δ (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 °C using (PirCp)3La, (MeCp)2ZrMe(OMe) and O3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 °C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.
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