Nonvolatile multilevel memory effect by resistive switching in manganite thin films | Zendy

H. K. Lau | Zendy; Chi Wah Leung | Zendy

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Nonvolatile multilevel memory effect by resistive switching in manganite thin films

Author(s) -

H. K. Lau,

Chi Wah Leung

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3043801

Subject(s) - manganite , non volatile memory , materials science , thin film , optoelectronics , electrode , resistive random access memory , planar , reading (process) , resistive touchscreen , random access memory , voltage , nanotechnology , computer science , electrical engineering , condensed matter physics , chemistry , physics , computer hardware , engineering , ferromagnetism , computer graphics (images) , political science , law , computer vision

A planar multilevel memory structure is proposed and examined based on the resistive switching phenomenon in La₀.₇Sr₀.₃MnO₃ films with gold electrodes. Through the application of specific voltage pulses, such structures can be driven to well-defined intermediate resistance values. Samples were subjected to repeated switching cycles and prolonged reading processes to examine their durability during operations. Prescribed states of the samples could be retained after 10 000 switching cycles, and such states remained stable upon continuous probing. The proposed structure provides a simple scheme for the implementation of compact and nonvolatile multibit memory devices.Department of Applied PhysicsMaterials Research CentreAuthor name used in this publication: C. W. Leun

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