Dry etching characteristics of amorphous As2S3 film in CHF3 plasma | Zendy

DukYong Choi | Zendy; Steve Madden | Zendy; Andrei V. Rode | Zendy; Rongping Wang | Zendy; Barry LutherDavies | Zendy

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Dry etching characteristics of amorphous As2S3 film in CHF3 plasma

Author(s) -

DukYong Choi,

Steve Madden,

Andrei V. Rode,

Rongping Wang,

Barry LutherDavies

Publication year - 2008

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3041647

Subject(s) - materials science , passivation , etching (microfabrication) , amorphous solid , dry etching , surface roughness , reactive ion etching , deposition (geology) , plasma , volumetric flow rate , surface finish , polymer , plasma etching , analytical chemistry (journal) , composite material , layer (electronics) , chemistry , crystallography , chromatography , quantum mechanics , paleontology , sediment , biology , physics

This research was supported by the Australian Research Council through its Centres of Excellence and Federation Fellow Programs.

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