Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy | Zendy

Yunlong Cai | Zendy; Tailun Wong | Zendy; S. K. Chan | Zendy; I. K. Sou | Zendy; Dang Sheng Su | Zendy; Ning Wang | Zendy

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Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

Author(s) -

Yunlong Cai,

Tailun Wong,

S. K. Chan,

I. K. Sou,

Dang Sheng Su,

Ning Wang

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3037024

Subject(s) - nanowire , molecular beam epitaxy , materials science , vapor–liquid–solid method , epitaxy , nanotechnology , diffusion , growth rate , catalysis , surface diffusion , optoelectronics , chemical physics , chemical engineering , layer (electronics) , chemistry , physics , geometry , mathematics , adsorption , engineering , thermodynamics , biochemistry

Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires. © 2008 American Institute of Physics.link_to_subscribed_fulltex

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