Open AccessThe Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants
Author(s) -
Jonathan England,
Alexander Kontos,
A. Renau,
R. Gwilliam,
Andrew J. Smith,
Andrew P. Knights,
Amitabh Jain,
Edmund G. Seebauer,
Susan B. Felch,
Yevgeniy V. Kondratenko
Publication year - 2008
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3033691
Subject(s) - dopant , materials science , wafer , dopant activation , annealing (glass) , sheet resistance , indium , germanium , fluorine , spreading resistance profiling , diffusion , ion implantation , analytical chemistry (journal) , boron , optoelectronics , composite material , doping , metallurgy , silicon , chemistry , thermodynamics , environmental chemistry , physics , organic chemistry , layer (electronics) , ion
Un‐patterned wafers were processed using low‐dose Indium or medium‐dose Germanium pre‐amorphization implants (PAI) followed by p‐type dopant implants of BF 2 or carborane (CBH). The wafers were then annealed by RTA (spike), laser anneal (LSA) or combination of LSA and spike. Active dopant distributions calculated from SIMS and sheet resistance measurements compared favorably with those determined by differential Hall, which is a challenging technique for shallow profiles. The trends in B diffusion behavior and activation are discussed in relation to the different implant damage budgets, damage evolution during the anneals and presence of fluorine. In particular, for low thermal budget LSA only anneals, CBH implants appear to give higher activation than BF 2 due to the absence of fluorine
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