Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures | Zendy

Mohanchand Paladugu | Zendy; Jin Zou | Zendy; Yanan Guo | Zendy; Xin Zhang | Zendy; Hannah J. Joyce | Zendy; Qiang Gao | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; Yong Kim | Zendy

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Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Author(s) -

Mohanchand Paladugu,

Jin Zou,

Yanan Guo,

Xin Zhang,

Hannah J. Joyce,

Qiang Gao,

Hark Hoe Tan,

C. Jagadish,

Yong Kim

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3033551

Subject(s) - nanowire , heterojunction , materials science , nanostructure , transmission electron microscopy , optoelectronics , semiconductor , nanotechnology , polarity (international relations) , gallium arsenide , semiconductor nanostructures , chemistry , cell , biochemistry

The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures. © 2008 American Institute of Physics

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