Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces | Zendy

Yun Sun | Zendy; P. Pianetta | Zendy; Po-Ta Chen | Zendy; Masaharu Kobayashi | Zendy; Yoshio Nishi | Zendy; Niti Goel | Zendy; Michael L. Garner | Zendy; Wilman Tsai | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

Author(s) -

Yun Sun,

P. Pianetta,

Po-Ta Chen,

Masaharu Kobayashi,

Yoshio Nishi,

Niti Goel,

Michael L. Garner,

Wilman Tsai

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3025852

Subject(s) - arsenic , x ray photoelectron spectroscopy , oxide , annealing (glass) , chemistry , inorganic chemistry , gallium arsenide , materials science , analytical chemistry (journal) , chemical engineering , optoelectronics , metallurgy , environmental chemistry , organic chemistry , engineering

The surface cleaning of InGaAs and InAlAs is studied using Synchrotron Radiation Photoelectron Spectroscopy. Thermal annealing at 400 C can not completely remove the native oxides from those surfaces. Elemental arsenic build-up is observed on both surfaces after acid treatment using HCl, HF or H{sub 2}SO{sub 4} solutions, which is similar to acid-cleaned GaAs surface. Cleaned InGaAs surface is oxide free but small amount of aluminum oxide remains on cleaned InAlAs surface. The common chemical reactions between III-As semiconductors and acid solutions are identified and are found to be dominated by arsenic chemistry.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research