High-performance C60 n-channel organic field-effect transistors through optimization of interfaces
Author(s) -
Xiaohong Zhang,
Bernard Kippelen
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3020533
Subject(s) - materials science , transconductance , optoelectronics , field effect transistor , dielectric , contact resistance , electron mobility , transistor , semiconductor , electrode , gate dielectric , threshold voltage , layer (electronics) , nanotechnology , voltage , electrical engineering , chemistry , engineering
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