Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition | Zendy

HoSang Kwack | Zendy; BongJoon Kwon | Zendy; Jin-Soo Chung | Zendy; YongHoon Cho | Zendy; SoonYong Kwon | Zendy; Hee Jin Kim | Zendy; Euijoon Yoon | Zendy

Open Access

Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Author(s) -

HoSang Kwack,

BongJoon Kwon,

Jin-Soo Chung,

YongHoon Cho,

SoonYong Kwon,

Hee Jin Kim,

Euijoon Yoon

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3002300

Subject(s) - indium , optoelectronics , materials science , quantum well , chemical vapor deposition , photoluminescence , wide bandgap semiconductor , stokes shift , amplified spontaneous emission , indium nitride , spontaneous emission , metalorganic vapour phase epitaxy , stimulated emission , gallium nitride , optics , nanotechnology , laser , luminescence , physics , epitaxy , layer (electronics)

We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/ cm2.open6

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