Intermixing and chemical structure at the interface between n-GaN and V-based contacts | Zendy

Sujitra Pookpanratana | Zendy; Ryan M. France | Zendy; Marcus Bär | Zendy; L. Weinhardt | Zendy; O. Fuchs | Zendy; M. Blum | Zendy; Wanli Yang | Zendy; Jonathan D. Denlinger | Zendy; T. D. Moustakas | Zendy; Clemens Heske | Zendy

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Intermixing and chemical structure at the interface between n-GaN and V-based contacts

Author(s) -

Sujitra Pookpanratana,

Ryan M. France,

Marcus Bär,

L. Weinhardt,

O. Fuchs,

M. Blum,

Wanli Yang,

Jonathan D. Denlinger,

T. D. Moustakas,

Clemens Heske

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2992199

Subject(s) - auger electron spectroscopy , ohmic contact , x ray photoelectron spectroscopy , vanadium , materials science , annealing (glass) , excited state , metal , electron spectroscopy , crystallography , chemistry , atomic physics , nanotechnology , nuclear magnetic resonance , physics , layer (electronics) , nuclear physics , metallurgy , composite material

The interface between n-type GaN and V-based contacts was characterized by soft x-ray spectroscopy. We have investigated the chemical interface structure before and after a rapid thermal annealing (RTA) step, which is crucial for the formation of an Ohmic contact. X-ray photoelectron and x-ray excited Auger electron spectra suggest that RTA induces an accumulation of metallic Ga at the surface. Using x-ray emission spectroscopy, we find that the probed nitrogen atoms are in a VN-like environment, indicating that vanadium interacts with nitrogen atoms from the GaN to form VN.

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