Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors | Zendy

HyoSuk Kim | Zendy; EunKyoung Jeon | Zendy; Jinhee Kim | Zendy; HyeMi So | Zendy; Hyunju Chang | Zendy; Jeong Yong Lee | Zendy; Noejung Park | Zendy

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Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors

Author(s) -

HyoSuk Kim,

EunKyoung Jeon,

Jinhee Kim,

HyeMi So,

Hyunju Chang,

Jeong Yong Lee,

Noejung Park

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2990642

Subject(s) - carbon nanotube , materials science , field effect transistor , electrode , transistor , nanotechnology , nanotube , carbon nanotube field effect transistor , carbon fibers , oxygen , optoelectronics , composite material , chemistry , composite number , electrical engineering , organic chemistry , engineering , voltage

We report air-stable n -type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n -type SWNT-FETs, our devices maintained their n -type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs.open8

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