Open AccessGaInSb/AlInSb multi-quantum-wells for mid-infrared lasers
Author(s) -
Min Yin,
G. R. Nash,
S. D. Coomber,
L. Buckle,
Peter J. Carrington,
A. Krier,
A. D. Andreev,
S. J. B. Przeslak,
G. de Valicourt,
Stuart Smith,
M. T. Emeny,
T. Ashley
Publication year - 2008
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2990224
Subject(s) - quantum well , photoluminescence , lasing threshold , luminescence , materials science , laser , excited state , optoelectronics , diode , population , wafer , infrared , indium , semiconductor laser theory , optics , atomic physics , physics , wavelength , demography , sociology
Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics
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