Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics | Zendy

Qiandong Zhuang | Zendy; A. M. R. Godenir | Zendy; A. Krier | Zendy; G. Tsai | Zendy; H. H. Lin | Zendy

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Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Author(s) -

Qiandong Zhuang,

A. M. R. Godenir,

A. Krier,

G. Tsai,

H. H. Lin

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2988281

Subject(s) - molecular beam epitaxy , photoluminescence , materials science , nitride , epitaxy , homogeneity (statistics) , alloy , diffraction , electron diffraction , nitrogen , optoelectronics , quantum well , analytical chemistry (journal) , electron microprobe , microanalysis , light emitting diode , crystallography , optics , chemistry , nanotechnology , metallurgy , statistics , physics , mathematics , organic chemistry , layer (electronics) , chromatography , laser

We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN: Sb/InAs p-i-n light emitting diodes operating near 4.0 mu m were also realized. (C) 2008 American Institute of Physics

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