High-resolution characterization of defects in oxide thin films | Zendy

Maxim N. Nikiforov | Zendy; Matthew J. Brukman | Zendy; Dawn A. Bonnell | Zendy

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High-resolution characterization of defects in oxide thin films

Author(s) -

Maxim N. Nikiforov,

Matthew J. Brukman,

Dawn A. Bonnell

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2982082

Subject(s) - materials science , thin film , phase diagram , radius , band diagram , characterization (materials science) , atomic force microscopy , oxide , nanometre , current (fluid) , image resolution , band gap , condensed matter physics , optoelectronics , nanotechnology , phase (matter) , optics , composite material , chemistry , physics , computer security , organic chemistry , computer science , metallurgy , thermodynamics

Nanometer sized defects in thin HfOx films are detected by atomic force microscopy facilitated leakage current measurements. Differences in the electrical properties of individual defects were distinguished. The effects of two mechanisms that localize the tip-sample interaction and increase spatial resolution were calculated. The expected increase in tip-sample current due to stress induced phase transformations and band gap narrowing has been calculated, and a behavior diagram is presented that shows the pressure necessary to generate a detectable current increase as a function of tip radius.

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