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We have prepared plasma enhanced atomic layer deposition HfOxNy thin films by in situ nitridation using nitrogen/oxygen mixture plasma and studied the effects of nitrogen contents and profiles on the negative bias temperature instability (NBTI). The nitrogen depth profiles and concentrations were controlled by changing the exposure sequences and the nitrogen to oxygen flow ratio, respectively. The best immunity to NBTI degradations was obtained for the nitrogen to oxygen ratio of 2:1 when nitrogen atoms are incorporated away from the high k/Si interface. We propose a dielectric degradation mechanism based on the reaction-diffusion model in which nitrogen plays a role of hydrogen generator at the interface and diffusion barrier in the bulk film.

journal of applied physics

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by <i>in situ</i> nitridation

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation