Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers | Zendy

J. Chamings | Zendy; A.R. Adams | Zendy; Stephen J. Sweeney | Zendy; B. Kunert | Zendy; Kerstin Volz | Zendy; W. Stolz | Zendy

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Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Author(s) -

J. Chamings,

A.R. Adams,

Stephen J. Sweeney,

B. Kunert,

Kerstin Volz,

W. Stolz

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2975845

Subject(s) - lasing threshold , materials science , spontaneous emission , semiconductor laser theory , laser , optoelectronics , hydrostatic pressure , atmospheric temperature range , wide bandgap semiconductor , silicon , quantum well , diode , semiconductor , atomic physics , optics , physics , wavelength , thermodynamics

We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (lambda=890nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.

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