Nearly intrinsic exciton lifetimes in single twin-free GaAs∕AlGaAs core-shell nanowire heterostructures | Zendy

S. Perera | Zendy; Melodie A. Fickenscher | Zendy; Howard E. Jackson | Zendy; Leigh M. Smith | Zendy; J.M. Yarrison-Rice | Zendy; Hannah J. Joyce | Zendy; Q. Gao | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; X. Zhang | Zendy; Jin Zou | Zendy

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Nearly intrinsic exciton lifetimes in single twin-free GaAs∕AlGaAs core-shell nanowire heterostructures

Author(s) -

S. Perera,

Melodie A. Fickenscher,

Howard E. Jackson,

Leigh M. Smith,

J.M. Yarrison-Rice,

Hannah J. Joyce,

Q. Gao,

Hark Hoe Tan,

C. Jagadish,

X. Zhang,

Jin Zou

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2967877

Subject(s) - heterojunction , exciton , nanowire , photoluminescence , materials science , optoelectronics , excitation , condensed matter physics , physics , quantum mechanics

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation. © 2008 American Institute of Physics

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