Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm | Zendy

A. Martinez | Zendy; K. Merghem | Zendy; S. Bouchoule | Zendy; G. Moreau | Zendy; A. Ramdane | Zendy; J.G. Provost | Zendy; F. Alexandre | Zendy; F. Grillot | Zendy; Olivier Dehaese | Zendy; Rozenn Piron | Zendy; S. Loualiche | Zendy

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Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

Author(s) -

A. Martinez,

K. Merghem,

S. Bouchoule,

G. Moreau,

A. Ramdane,

J.G. Provost,

F. Alexandre,

F. Grillot,

Olivier Dehaese,

Rozenn Piron,

S. Loualiche

Publication year - 2008

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2957479

Subject(s) - molecular beam epitaxy , wetting layer , optoelectronics , quantum dot , materials science , quantum dot laser , laser , semiconductor laser theory , oscillation (cell signaling) , relaxation (psychology) , semiconductor , epitaxy , optics , layer (electronics) , chemistry , nanotechnology , physics , psychology , social psychology , biochemistry

International audienceDynamic properties of truly three-dimensional-confined InAs/InP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8 GHz with a clear relaxation oscillation peak, indicating less damping than InAs/GaAs QD lasers. The Henry factor amounts to ∼ 1.8 below threshold and increases to ∼ 6 above threshold, which is attributed to band filling of the thick wetting layer

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