Open AccessElectrical transport properties of n-type (110)-oriented bismuth thin films grown at 110 K on glass substrates
Author(s) -
Keng Shuo Wu,
Ming-Yau Chern
Publication year - 2008
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2957055
Subject(s) - materials science , electrical resistivity and conductivity , thin film , bismuth , hall effect , diffraction , pulsed laser deposition , vacuum deposition , deposition (geology) , analytical chemistry (journal) , scanning electron microscope , surface roughness , composite material , optics , nanotechnology , chemistry , metallurgy , paleontology , physics , engineering , chromatography , sediment , electrical engineering , biology
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