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Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors
Author(s) -
P. Kim,
X.-H. Zhang,
Benoît Domercq,
Simon C. Jones,
Peter J. Hotchkiss,
Seth R. Marder,
Bernard Kippelen,
Joseph W. Perry
Publication year - 2008
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2949320
Subject(s) - materials science , pentacene , nanocomposite , permittivity , optoelectronics , capacitance , nanoparticle , dielectric , gate dielectric , organic semiconductor , field effect transistor , current density , insulator (electricity) , transistor , misfet , leakage (economics) , nanotechnology , thin film transistor , electrode , electrical engineering , chemistry , voltage , physics , engineering , layer (electronics) , quantum mechanics , economics , macroeconomics

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